FDMC86160 Datasheet, MOSFET, Fairchild Semiconductor

Download (Size : 305.93KB)

FDMC86160 Features and benefits

* Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
* High performance technology for extremely low rDS(on)
* Termi.

FDMC86160 Application

where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions. Application.

FDMC86160 Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in .

Image gallery