FDMC86160
Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
- Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
- Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS Compliant
